BFP520F_07 Datasheet, PDF(3/6 Page) Infineon Technologies AG

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BFP520F_07 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

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BFP520F

Electrical Characteristics at TA = 25Â°C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 30 mA, VCE = 2 V, f = 2 GHz

32 45

Collector-base capacitance

VCB = 2 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb

- 0.07 0.14

Unit

GHz

Collector emitter capacitance

VCE = 2 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

- 0.25 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

- 0.31 -

Noise figure

IC = 2 mA, VCE = 2 V, ZS = ZSopt ,

f = 1.8 GHz

Power gain, maximum stable1)

IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt ,

f = 1.8 GHz

Gms

- 0.95 - dB

- 22.5 - dB

Insertion power gain

VCE = 2 V, IC = 20 mA, f = 1.8 GHz,

ZS = ZL = 50 â¦

Third order intercept point at output

VCE = 2 V, IC = 20 mA, f = 1.8 GHz,

ZS = ZSopt, ZL = ZLopt

1dB Compression point

IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt,

f = 1.8 GHz

|S21|2

IP3

P-1dB

- 20.5 -

- 23.5 - dBm

- 10.5 -

1Gms = |S21 / S12|

2007-03-30

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