BFP520F_07 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor*
• For highest gain low noise amplifier
at 1.8 GHz and 2 mA / 2 V
Outstanding Gms = 23 dB
Noise Figure F = 0.95 dB
• For oscillators up to 15 GHz
• Transition frequency f_T = 45 GHz
• Gold metallisation for high reliability
• SIEGET ^ 45 - Line
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
* Short term description
BFP520F
3
2
4
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP520F
Marking
Pin Configuration
APs
1=B 2=E 3=C 4=E -
-
Package
TSFP-4
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
V_CEO
T_A > 0 °C
T_A ≤ 0 °C
Collector-emitter voltage
V_CES
Collector-base voltage
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Base current
I_B
Total power dissipation²⁾
P_tot
T_S ≤ 107 °C
Junction temperature
T_j
Ambient temperature
T_A
Storage temperature
T_stg
1_{Pb-containing package may be available upon special request}
2_{TS is measured on the collector lead at the soldering point to pcb}
Value
Unit
V
2.5
2.4
10
10
1
40
mA
4
100
mW
150
°C
-65 ... 150
-65 ... 150
2007-03-30
1