BFP405F_13 Datasheet, PDF(3/6 Page) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

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BFP405F_13 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

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BFP405F

Electrical Characteristics at TA = 25 Â°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 10 mA, VCE = 3 V, f = 2 GHz

Collector-base capacitance

VCB = 2 V, f = 1 MHz, VBE = 0 ,

emitter grounded

18 25

- GHz

Ccb

- 0.05 0.1 pF

Collector emitter capacitance

VCE = 2 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

0.2

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

- 0.25 -

Minimum noise figure

IC = 2 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt

Power gain, maximum stable1)

IC = 5 mA, VCE = 2 V, ZS = ZSopt,

ZL = ZLopt , f = 1.8 GHz

Insertion power gain

VCE = 2 V, IC = 5 mA, f = 1.8 GHz,

ZS = ZL = 50 â¦

Third order intercept point at output2)

VCE = 2 V, IC = 5 mA, f = 1.8 GHz,

ZS = ZL = 50 â¦

1dB compression point at output

IC = 5 mA, VCE = 2 V, ZS = ZL = 50 â¦,

f = 1.8 GHz

NFmin

Gms

|S21|2

IP3

P-1dB

- 1.25 - dB

- 22.5 - dB

- dBm

1Gms = |S21 / S12|

2IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50â¦ from 0.1 MHz to 6 GHz

2013-09-19

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