BFP405F_13 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor
• For low current applications
• Minimum noise figure NF_min = 1.25 dB at 1.8 GHz
Outstanding G_ms = 22.5 dB at 1.8 GHz
• Transition frequency f_T = 25 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package (1.4 x 0.8 x 0.59 mm) with visible leads
• Qualification report according to AEC-Q101 available
BFP405F
3
2
4
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP405F
Marking
Pin Configuration
ALs
1=B 2=E 3=C 4=E -
-
Package
TSFP-4
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
V_CEO
T_A = 25 °C
T_A = -55 °C
Collector-emitter voltage
V_CES
Collector-base voltage
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Base current
I_B
Total power dissipation¹⁾
P_tot
T_S ≤ 112 °C
Junction temperature
T_J
Storage temperature
T_Stg
1_{TS is measured on the emitter lead at the soldering point to the pcb}
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
4.5
4.1
15
15
1.5
25
3
75
150
-55 ... 150
Value
500
Unit
V
mA
mW
°C
Unit
K/W
1
2013-09-19