BFP183_13 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

BFP183
Electrical Characteristics at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 25 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
C_cb
V_CB = 10 V, f = 1 MHz, V_BE = 0 ,
emitter grounded
6
8
- GHz
-
0.3 0.5 pF
Collector emitter capacitance
V_CE = 10 V, f = 1 MHz, V_BE = 0 ,
base grounded
C_ce
- 0.27 -
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz, V_CB = 0 ,
collector grounded
C_eb
-
1.1
-
Minimum noise figure
I_C = 5 mA, V_CE = 8 V, Z_S = Z_Sopt,
f = 900 MHz
NF_min
dB
-
0.9
-
f = 1.8 GHz
-
1.4
-
Power gain, maximum stable¹⁾
G_ms
I_C = 15 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
-
22
- dB
Power gain, maximum available¹⁾
G_ma
I_C = 15 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 1.8 GHz
- 15.5 - dB
Transducer gain
I_C = 15 mA, V_CE = 8 V, Z_S = Z_L = 50 Ω,
f = 900 MHz
|S_21e|²
dB
- 17.5 -
f = 1.8 GHz
- 11.5 -
1_{Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21 / S12|}
3
2013-10-15