BFP183_13 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at
3
collector currents from 2 mA to 30 mA
4
• f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
BFP183
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP183
Marking
Pin Configuration
RHs _{1=C 2=E 3=B 4=E -}
-
Package
SOT143
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 76 °C
Junction temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_J
T_Stg
12
V
20
20
2
65
mA
5
250
mW
150
°C
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point²⁾
R_thJS
295
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
2_{For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)}
1
2013-10-15