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| BCV29 Datasheet, PDF (3/5 Pages) NXP Semiconductors – NPN Darlington transistors | |||
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BCV29, BCV49
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VCEsat
-
-
1V
Base-emitter saturation voltage 1)
IC = 100 mA, IB = 0.1 mA
VBEsat
-
-
1.5
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT
-
150
- MHz
Ccb
-
3.5
- pF
1) Pulse test: t ⤠300µs, D = 2%
3
Jul-12-2001
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