BCV29 Datasheet, PDF (1/5 Pages) NXP Semiconductors – NPN Darlington transistors

NPN Silicon Darlington Transistors

For general AF applications

High collector current

High current gain

Complementary types: BCV28, BCV48 (PNP)
BCV29, BCV49
1
2
3
2
VPS05162
Type
BCV29
BCV49
Marking
EF
EG
1=B
1=B
Pin Configuration
2=C 3=E 4=C
2=C 3=E 4=C
Package
SOT89
SOT89
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, T_S = 130 °C
Junction temperature
Storage temperature
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
BCV29
BCV49
30
60
40
80
10
10
500
800
100
200
1
150
-65 ... 150
Thermal Resistance
Junction - soldering point¹⁾
R_thJS

20
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
W
°C
K/W
1
Jul-12-2001