BCR48PN_07 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – NPN/PNP Silicon Digital Transistor Array

BCR48PN
Electrical Characteristics at T_A=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics for PNP Type
Collector-emitter breakdown voltage
I_C = 100 µA, I_B = 0
Collector-base breakdown voltage
I_C = 10 µA, I_E = 0
Collector cutoff current
V_CB = 40 V, I_E = 0
Emitter cutoff current
V_EB = 5 V, I_C = 0
V_(BR)CEO 50
V_(BR)CBO 50
I_CBO
-
I_EBO
-
-
-V
-
-
- 100 nA
- 164 µA
DC current gain 1)
I_C = 5 mA, V_CE = 5 V
Collector-emitter saturation voltage 1)
I_C = 10 mA, I_B = 0.5 mA
h_FE
70
-
--
V_CEsat
-
-
0.3 V
Input off voltage
I_C = 100 µA, V_CE = 5 V
V_i(off)
0.4
-
0.8
Input on voltage
I_C = 2 mA, V_CE = 0.3 V
Input resistor
Resistor ratio
V_i(on)
0.5
-
1.1
R₁
R₁/R₂
1.5 2.2 2.9 kΩ
0.042 0.047 0.052 -
AC Characteristics for PNP Type
Transition frequency
I_C = 10 mA, V_CE = 5 V, f = 100 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
f_T
- 200 - MHz
C_cb
-
3
- pF
1) Pulse test: t < 300µs; D < 2%
3
2007-07-24