BCR48PN_07 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – NPN/PNP Silicon Digital Transistor Array

NPN/PNP Silicon Digital Transistor Array
BCR48PN
• Switching circuit, inverter, interface circuit,
driver circuit
• Two (galvanic) internal isolated NPN/PNP
Transistors in one package
• Built in bias resistor
NPN: R₁ = 47kΩ, R₂ = 47kΩ
PNP: R₁= 2.2kΩ, R₂ = 47kΩ
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
4
5
6
3
2
1
Top View
654
W1s
123
Direction of Unreeling
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07193
C1
B2
E2
6
5
4
R₂
R₁
TR2
TR1
R₁
R₂
1
2
3
E1
B1
C2
EHA07176
Type
BCR48PN
Marking
WTs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 _SOT363
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
V_CEO
Collector-base voltage
V_CBO
Input forward voltage
NPN
V_i(fwd)
Input forward voltage
PNP
V_i(fwd)
Input reverse voltage
Input reverse voltage
DC collector current
NPN
PNP
NPN
V_i(rev)
V_i(rev)
I_C
DC collector current
PNP
I_C
Total power dissipation, T_S = 115 °C
P_tot
Junction temperature
T_j
Storage temperature
T_stg
1_{Pb-containing package may be available upon special request}
Value
Unit
50
V
50
80
20
10
5
70
mA
100
250
mW
150
°C
-65...+150
1
2007-07-24