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BCM846S Datasheet, PDF (3/7 Pages) Infineon Technologies AG – NPN Silicon AF Transistor Array
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BCM846S
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
fT
-
250
-
Ccb
-
2
-
Ceb
-
10
-
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
h11e
-
4.5
-
Open-circuit reverse voltage transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
Short-circuit forward current transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
h12e
h21e
-
2
-
-
330
-
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
Noise figure
h22e
-
30
-
F
-
-
10
IC = 200 µA, VCE = 5 V, f = 1 kHz,
 f = 200 Hz, RS = 2 k
Unit
MHz
pF
k
10-4
-
S
dB
3
Aug-30-2002
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