BCM846S Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon AF Transistor Array

BCM846S
NPN Silicon AF Transistor Array

Precision matched transistor pair: I_C  10%

For current mirror applications

Low collector-emitter saturation voltage

Two (galvanic) internal isolated Transistors

Complementary type: BCM856S
C1
B2
E2
6
5
4
4
5
6
3
2
1
VPS05604
TR2
TR1
1
2
3
E1
B1
C2
EHA07178
Type
BCM846S
Marking
Pin Configuration
Package
1Ms
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation-
T_S = 115 °C
Junction temperature
Storage temperature
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_CM
P_tot
T_j
T_stg
Value
65
80
80
6
100
200
250
150
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
140
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
mW
°C
Unit
K/W
1
Aug-30-2002