BBY53 Datasheet, PDF (3/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)

BBY53...
Diode capacitance C_T = ƒ (V_R)
f = 1MHz
Capacitance change ∆C = ƒ(T_A)
f = 1 MHz
pF9
8.4
8
7.6
7.2
6.8
6.4
6
5.6
5.2
4.8
4.4
4
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 V 4
V_R
Temperature coefficient of the diode
capacitance TC_C = ƒ (V_R)
f = 1 MHz
10 ^-2
5.25
%
3V
3.75
3
1V
2.25
1.5
0.75
0
-0.75
-1.5
-2.25
-3
-3.75
-40 -20 0 20 40 60 °C 100
T_A
1/°C
10 ^-3
10 ^-4
0 0.5 1 1.5 2 2.5 3 V 4
V_R
3
Oct-13-2003