BBY53 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)

BBY53...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
V_R = 4 V
V_R = 4 V, T_A = 85 °C
I_R
nA
-
-
10
-
- 200
AC Characteristics
Diode capacitance
V_R = 1 V, f = 1 MHz
V_R = 3 V, f = 1 MHz
Capacitance ratio
V_R = 1 V, V_R = 3 V, f = 1 MHz
Series resistance
V_R = 1 V, f = 1 GHz
C_T
4.8 5.3
1.85 2.4
C_T1/C_T3 ^{1.8 2.2}
pF
5.8
3.1
2.6
r_S
- 0.47 - Ω
2
Oct-13-2003