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BB644_07 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Silicon Variable Capacitance Diodes
BB644/BB664...
Diode capacitance CT = ƒ (VR)
f = 1MHz
70
pF
60
55
50
45
40
35
30
25
20
15
10
5
0
0
5
10 15 20 25 V
35
VR
Reverse current IR = ƒ(VR)
TA = Parameter
10 -9
Temperature coefficient of the diode
capacitance TCc = ƒ (VR)
10 -3
1/°C
10 -4
10
-5
10
0
10 1
V
10 2
VR
A
10 -10
85°C
25°C
10 -11
0
4
8 12 16 20 24 V 30
VR
3
2007-04-20