BB644_07 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – Silicon Variable Capacitance Diodes

BB644/BB664...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
V_R = 30 V
V_R = 30 V, T_A = 85 °C
I_R
nA
-
-
10
-
- 100
AC Characteristics
Diode capacitance
V_R = 1 V, f = 1 MHz
V_R = 2 V, f = 1 MHz
V_R = 25 V, f = 1 MHz
V_R = 28 V, f = 1 MHz
C_T
pF
39 41.8 44.5
29.4 31.85 34.2
2.5 2.7 2.85
2.4 2.55 2.75
Capacitance ratio
V_R = 1 V, V_R = 28 V, f = 1 MHz
Capacitance ratio
V_R = 2 V, V_R = 25 V, f = 1 MHz
Capacitance matching¹⁾
V_R = 1 ... 28 V, f = 1 MHz, 7 diodes sequence
Series resistance
V_R = 5 V, f = 470 MHz
1_{For details please refer to Application Note 047.}
C_T1/C_T28
C_T2/C_T25
∆C_T/C_T
r_S
15 16.4 17.8
11 11.8 12.6
-
-
2%
-
0.6 0.75 Ω
2
2007-04-20