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| BB640_07 Datasheet, PDF (3/5 Pages) Infineon Technologies AG – Silicon Variable Capacitance Diode | |||
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BB640...
Diode capacitance CT = Æ (VR)
f = 1MHz
Temperature coefficient of the diode
capacitance TCc = Æ (VR)
100
pF
C T 90
80
70
60
50
40
30
20
10
0
10 -1
10 0
EHD07045
10 -3
1/°C
10 -4
10 1 V 10 2
VR
10
-5
10
0
10 1
V
10 2
VR
Reverse current IR = Æ (TA)
VR = 28V
Reverse current IR = Æ(VR)
TA = Parameter
300
10 -9
pA
10 -10
200
150
10 -11 85°C
25°C
100
10 -12
0°C
50
0
0 10 20 30 40 50 60 70 80 °C 100
TA
10 -13
0 4 8 12 16 20 24 V 30
VR
3
2007-04-20
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