BB640_07 Datasheet, PDF (2/5 Pages) Infineon Technologies AG – Silicon Variable Capacitance Diode

BB640...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
V_R = 30 V
V_R = 30 V, T_A = 85 °C
I_R
nA
-
-
10
-
- 200
AC Characteristics
Diode capacitance
V_R = 1 V, f = 1 MHz
V_R = 2 V, f = 1 MHz
V_R = 25 V, f = 1 MHz
V_R = 28 V, f = 1 MHz
C_T
pF
62 69 76
47.5 54.5 61.5
2.85 3.28 3.7
2.8 3.05 3.3
Capacitance ratio
V_R = 1 V, V_R = 28 V, f = 1 MHz
Capacitance ratio
V_R = 2 V, V_R = 25 V, f = 1 MHz
Capacitance matching¹⁾
V_R = 1 V, V_R = 28 V, f = 1 MHz
Series resistance
C_T = 12 pF, f = 100 MHz
1_{For details please refer to Application Note 047.}
C_T1/C_T28 19.5
-
25
C_T2/C_T25
15 16.6
-
∆C_T/C_T
-
-
2.5 %
r_S
- 1.15 - Ω
2
2007-04-20