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BAT2402LSE6327 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – Silicon Schottky Diode
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BAT24-02LS
Diode capacitance CT = ƒ (VR)
f = 1MHz, TA = 25 °C
Diode capacitance CT = ƒ(TA)
VR = 0 V, f = 1MHz
0.3
pF
0.2
0.15
0.1
0.05
0
0
1
2
V
4
VR
0.3
pF
0.26
0.24
0.22
0.2
0.18
0.16
0.14
0.12
0.1
-50 -25
0
25
50 °C
100
TA
Differential forward resistance RF = ƒ (TA) Reverse current IR = ƒ (TA)
IF = 10 mA / 50 mA
VR = 1 V
10
Ohm
10 -4
A
8
7
6
5
4
3
2
1
0
-50 -25
0
25
50 °C
100
TA
10 -5
10 -6
10 -7
10 -8
10 -9
-50 -25
0
25
50 °C
100
TA
3
2011-06-15
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