BAT2402LSE6327 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Silicon Schottky Diode

Silicon Schottky Diode
• RF Schottky diode for mixer applications
up to 26 GHz
• Extremely low inductance combined with
ultra low device capacitance
• Very stable performance for all major parameters
• Package size: 0.62 x 0.31 x 0.31 mm³ only
• Pb-free (RoHS compliant) package
BAT24-02LS
BAT24-02LS
1
2
Type
BAT24-02LS
Package Configuration
TSSLP-2-1 single, leadless
L_S(nH) Marking
0.2 ±0.05 S
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
Forward current
Total power dissipation
T_S ≤ 73 °C
V_R
4
V
I_F
110
mA
P_tot
100
mW
Junction temperature
Operating temperature range
T_j
150
°C
T_op
-55 ... 150
Storage temperature
T_stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point¹⁾
R_thJS
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
≤ 770
Unit
K/W
1
2011-06-15