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| BAT15-04R_09 Datasheet, PDF (3/5 Pages) Infineon Technologies AG – Silicon RF Schottky Diodes | |||
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BAT15-04R*
Diode capacitance CT = Æ (VR)
f = 1MHz
0.3
pF
0.2
0.15
0.1
0.05
0
0
1
2
V
4
VR
Reverse current IR = Æ(VR)
TA = Parameter
10 -4
A
10 -5
10 -6
10 -7
10 -8
10 -9
-50 -25
0
25
50 °C
100
TA
Forward Voltage VF = Æ (TA)
IF = Parameter
Forward current IF = Æ (VF)
TA = 25°C
0.5
V
0.4
0.35
10mA
0.3
0.25
1mA
0.2
100µA
0.15
0.1
0.05
0
-50 -25
0
25
50 °C
100
TA
10 -1
A
10 -2
10 -3
10 -4
10 -5
10 -6
10 -7
10 -8
0
3
0.2
0.4
0.6
V
1
VF
2009-05-13
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