BAT15-04R_09 Datasheet, PDF (1/5 Pages) Infineon Technologies AG – Silicon RF Schottky Diodes

Silicon RF Schottky Diodes
• Low barrier type for mixer applications
up to 12 GHz, phase detectors and modulators
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BAT15-04R*
BAT15-04R
3
D1
D2
1
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BAT15-04R*
Package
SOT 23
Configuration
reverse series pair
L_S(nH) Marking
1.5 4R
*preliminary
1_{Pb-containing package may be available upon special request}
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
Forward current
Junction temperature
V_R
4
V
I_F
110
mA
T_j
150
°C
Operating temperature range
T_op
-55 ... 150
Storage temperature
T_stg
-65 ... 150
1
2009-05-13