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BAR81W Datasheet, PDF (3/4 Pages) Siemens Semiconductor Group – Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
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BAR81...
Diode capacitance CT = (VR)
f = Parameter
Reverse parallel resistance RP = (VR)
f = Parameter
1
F
0.8
0.7
0.6
0.5
1 MHz ... 1.8 GHz
0.4
0.3
0.20 2 4 6 8 10 12 14 16 V 20
VR
10 4
KOhm
10 3
100 MHz
10 2
1 GHz
1.8 GHz
10 1
10 0
10 -1
0 2 4 6 8 10 12 14 16 V 20
VR
Forward resistance rf =  (IF)
f = 100MHz
10 1
Ohm
Forward current IF =  (VF)
TA = Parameter
10 0
A
10 -1
10 -2
10 0
10 -3
-40 °C
25 °C
10 -4
85 °C
125 °C
10 -5
10
-1
10
-2
10 -1
10 0
10 1 mA 10 2
IF
10 -6
0
3
0.2
0.4
0.6
0.8
V
1.2
VF
Dec-20-2002
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