BAR81W Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

Silicon RF Switching Diode

Designed for use in shunt configuration in
high performance RF switches

High shunt signal isolation

Low shunt insertion loss

Optimized for short - open transformation
using  lines
BAR81...
BAR81W
4
3
1
2
Type
BAR81W
Package
SOT343
* series inductance chip to ground
Configuration
single shunt-diode
L_S(nH) Marking
0.15* BBs
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
V_R
Forward current
I_F
Total power dissipation
P_tot
T_s
138°C
Junction temperature
T_j
Operating temperature range
T_op
Storage temperature
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point¹⁾
R_thJS
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
30
100
100
150
-55 ... 125
-55 ... 150
Value

120
Unit
V
mA
mW
°C
Unit
K/W
1
Dec-20-2002