BFP740ESD Datasheet, PDF (23/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

BFP740ESD
Electrical Characteristics
42
39
0.15GHz
36
0.45GHz
33
0.90GHz
30
1.50GHz
27
1.90GHz
2.40GHz
24
3.50GHz
21
18
5.50GHz
15
10.00GHz
12
9
0 5 10 15 20 25 30 35 40 45
I_C [mA]
Figure 12 Maximum Power Gain G_max = f (I_C), V_CE = 3 V, f = Parameter in GHz
42
39
0.15GHz
36
33
0.45GHz
0.90GHz
30
1.50GHz
27
1.90GHz
2.40GHz
24
3.50GHz
21
18
5.50GHz
15
10.00GHz
12
Figure 13
9
0
1
2
3
4
5
V_CE [V]
Maximum Power Gain G_max = f (V_CE), I_C = 25 mA, f = Parameter in GHz
Data Sheet
23
Revision 1.0, 2010-06-29