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BFP740ESD Datasheet, PDF (16/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor | |||
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BFP740ESD
Electrical Characteristics
Table 12 AC Characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
Gms
â
Gms
â
Low noise operation point
High linearity operation point
Minimum noise figure
S21
â
S21
â
Minimum noise figure
Associated gain
Linearity
NFmin
â
Gass
â
1 dB gain compression point
3rd order intercept point
OP1dB
â
OIP3
â
Values
Typ. Max.
22
â
25.5 â
19.5 â
22
â
0.65 â
20
â
10.5 â
25
â
Unit Note / Test Condition
dB
dB
dB
dBm
IC = 6 mA
IC = 25 mA
ZS = ZL = 50 Ω
IC = 6 mA
IC = 25 mA
ZS = Zopt
IC = 6 mA
IC = 6 mA
ZS = ZL = 50 Ω
IC = 25 mA
IC = 25 mA
Table 13 AC Characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
Gms
â
Gms
â
Low noise operation point
High linearity operation point
Minimum noise figure
S21
â
S21
â
Minimum noise figure
Associated gain
Linearity
NFmin
â
Gass
â
1 dB gain compression point
3rd order intercept point
OP1dB
â
OIP3
â
Values
Typ. Max.
20.5 â
23
â
17
â
19
â
0.7
â
16.5 â
10.5 â
24.5 â
Unit Note / Test Condition
dB
dB
dB
dBm
IC = 6 mA
IC = 25 mA
ZS = ZL = 50 Ω
IC = 6 mA
IC = 25 mA
ZS = Zopt
IC = 6 mA
IC = 6 mA
ZS = ZL = 50 Ω
IC = 25 mA
IC = 25 mA
Data Sheet
16
Revision 1.0, 2010-06-29
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