1ED020I12-BT Datasheet, PDF (23/34 Pages) Infineon Technologies AG – Single IGBT Driver IC

5.4.5 Short Circuit Clamping
EiceDRIVER™
1ED020I12-BT
Electrical ParametersElectrical Characteristics
Table 9 Short Circuit Clamping
Parameter
Symbol
Clamping voltage (OUT)
(V_OUT-V_VCC2)
V_CLPout
Min.
–
Clamping voltage
(CLAMP) (V_VCLAMP-V_VCC2)
V_CLPclamp –
Clamping voltage (CLAMP) V_CLPclamp –
Values
Typ.
0.8
Max.
1.3
1.3
–
0.7
1.1
Unit Note / Test Condition
V
IN+=High, IN- = Low,
OUT = High
I_OUT = 500 mA
(pulse test,
t_CLPmax = 10 μs)
V
IN+ = High, IN- = Low,
OUT = High
I_CLAMP = 500 mA
(pulse test,
t_CLPmax = 10 μs)
V
IN+ = High, IN- = Low,
OUT = High
I_CLAMP = 20 mA
5.4.6 Dynamic Characteristics
Dynamic characteristics are measured with V_VCC1 = 5 V, V_VCC2 = 15 V and V_VEE2 = -8 V.
Table 10 Dynamic Characteristics
Parameter
Symbol
IN+, IN- input to output
propagation delay ON and
OFF
T_PDON
IN+, IN- input to output
propagation delay distortion
(T_PDOFF-T_PDON)
IN+, IN- input to output
propagation delay ON
variation due to temp
T_PDISTO
T_PDONt
IN+, IN- input to output
propagation delay OFF
variation due to temp
T_PDOFFt
IN+, IN- input to output
propagation delay distortion
variation due to temp
(T_PDOFF-T_PDON)
Rise Time
T_PDISTOt
T_RISE
Min.
1.5
-40
–
–
–
10
150
Values
Typ.
1.75
Max.
2.0
Unit Note / Test Condition
μs
C_TLSET = 0, T_A = 25°C
-10
20
ns
C_TLSET = 0, T_A = 25°C
–
200
ns
C 1)
TLSET
=
0
–
230
ns
C 1)
TLSET
=
0
–
25
ns
C 1)
TLSET
=
0
30
60
ns
C_LOAD = 1 nF,
V_L 10%, V_H 90%
400
800
ns
C_LOAD = 34 nF
V_L 10%, V_H 90%
Final Data Sheet
23
Rev 2.0, 2012-07-31