1ED020I12-F2 Datasheet, PDF (22/28 Pages) Infineon Technologies AG – Single IGBT Driver IC

EiceDRIVER™
1ED020I12-F2
Electrical ParametersElectrical Characteristics
Table 10 Dynamic Characteristics (cont’d)
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Rise Time
T_RISE
10
30
60
ns
200
400
800
ns
Fall Time
T_FALL
10
50
90
ns
200
350
600
ns
1) The parameter is not subject to production test - verified by design/characterization
5.4.7 Desaturation Protection
Note /
Test Condition
C_LOAD = 1 nF
V_L 10%, V_H 90%
C_LOAD = 34 nF
V_L 10%, V_H 90%
C_LOAD = 1 nF
V_L 10%, V_H 90%
C_LOAD = 34 nF
V_L 10%, V_H 90%
Table 11 Desaturation Protection
Parameter
Symbol
Min.
Blanking Capacitor
I_DESATC
450
Charge Current
Blanking Capacitor
I_DESATD
9
Discharge Current
Desaturation Reference V_DESAT
8.3
Level
Desaturation Filter Time T_DESATleb –
Desaturation Sense to T_DESATOUT –
OUT Low Delay
Desaturation Sense to T_DESATFLT –
FLT Low Delay
Desaturation Low
Voltage
V_DESATL
0.4
Leading edge blanking T_DESATleb –
5.4.8 Active Shut Down
Values
Typ.
500
Max.
550
14
–
9
9.5
250
–
350
430
–
2.25
0.6
0.95
400
–
Unit
μA
mA
V
ns
ns
μs
V
ns
Note /
Test Condition
V_VCC2 =15 V,
V_VEE2=- 8 V
V_DESAT = 2 V
V_VCC2 =15 V,
V_VEE2 = -8 V
V_DESAT = 6 V
V_VCC2 = 15 V
V_VCC2 = 15 V,
V_VEE2 = -8 V
V_DESAT = 9 V
V_OUT = 90%
C_LOAD = 1 nF
V_FLT# = 10%;
I_{FLT #} = 5 mA
IN+ = Low, IN- = Low,
OUT = Low
Not subject of
production test
Final Data Sheet
22
Rev. 2.0, 2011-08-01