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BTM7752G Datasheet, PDF (20/25 Pages) Infineon Technologies AG – High Current H-Bridge Trilith IC 3G
High Current H-Bridge
BTM7752G
Block Description and Characteristics
6.4.5 Electrical Characteristics - Control and Diagnostics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Test Conditions
Min. Typ. Max.
Control Inputs (IN and INH)
6.4.1
High level threshold voltage VINH(H),
–
INH, IN1, IN2
VIN1(H), VIN2(H)
1.6
2
V
–
6.4.2 Low level threshold voltage VINH(L),
1.1
1.4
–
INH, IN1, IN2
VIN1(L), VIN2(L)
6.4.3 Input voltage hysteresis
VINHHY,VINHY –
200
–
V
–
mV 1)
6.4.4 Input current
IINH(H),
–
IIN1(H), IIN2(H)
30
200
µA
VIN1,VIN2,VINH = 5.5 V
6.4.5 Input current
IINH(L),
–
IIN1(L), IIN2(L)
25
125
µA
VIN1, VIN2, VINH = 0.4 V
Current Sense
6.4.6
Current sense ratio in static kILIS
on-condition
kILIS = IL / IIS
6.4.7
Differential Current sense
ratio in static on-condition
dkILIS = dIL /dIIS
dkILIS
103 RIS = 1 kΩ
2
3.1
4.2
IL = 6 A
1.7
3.1
4.6
IL = 2 A
1.5
3.1
5
IL = 1 A
103 RIS = 1 kΩ
2
3.1
4.2
IL > 0.5 A
1)
6.4.8
Maximum analog sense
current - Sense current in
fault condition
IIS(lim)
4.25 5
7
mA VS = 13.5 V
RIS = 1 kΩ
6.4.9 Isense leakage current
IISL
–
–
1
µA
VIN1 = VIN2 = 0 V,
no error detected
6.4.10 Isense leakage current,
IISH
active high side switch
–
1
100
µA
VIN1 or VIN2 = 5 V
IL = 0 A
1) Not subject to production test, specified by design.
Data Sheet
20
Rev. 2.0, 2010-05-28