SPD07N20_08 Datasheet, PDF (2/10 Pages) Infineon Technologies AG – SIPMOSÒ Power Transistor Features N channel Enhancement mode Avalanche rated

SPD 07N20 G
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
@ 6 cm² cooling area¹⁾
Symbol
Values
Unit
min. typ. max.
R_thJC
R_thJA
R_thJA
-
3.1 K/W
-
- 100
-
-
75
-
-
50
Electrical Characteristics, at T_j = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V_GS = 0 V, I_D = 0.25 mA
V_(BR)DSS 200
-
-V
Gate threshold voltage, V_GS = V_DS
I_D = 1 mA
Zero gate voltage drain current
V_DS = 200 V, V_GS = 0 V, T_j = 25 ˚C
V_DS = 200 V, V_GS = 0 V, T_j = 125 ˚C
V_GS(th)
2.1
3
4
I_DSS
µA
-
0.1 1
-
- 100
Gate-source leakage current
V_GS = 20 V, V_DS = 0 V
Drain-Source on-state resistance
V_GS = 10 V, I_D = 4.5 A
I_GSS
-
10 100 nA
R_DS(on)
Ω
-
0.3 0.4
1 _{Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain}
connection. PCB is vertical without blown air.
Rev. 2.4
Page 2
2008-09-01