SPD07N20_08 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – SIPMOSÒ Power Transistor Features N channel Enhancement mode Avalanche rated

SIPMOS® Power Transistor
Features
• N channel
• Enhancement mode
• Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
• dv/dt rated
SPD 07N20 G
V_DS
200 V
R_DS(on) 0.4 Ω
I_D
7A
Type
SPD07N20 G
SPU07N20 G
Package
PG-TO252
PG-TO251
Pb-free
Yes
Yes
Packaging
Tape and Reel
Tube
Pin 1 Pin 2 Pin 3
G
D
S
Maximum Ratings, at T_j = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 ˚C
T_C = 100 ˚C
Pulsed drain current
T_C = 25 ˚C
Avalanche energy, single pulse
I_D = 7 A, V_DD = 50 V, R_GS = 25 Ω
IDpulse
E_AS
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
E_AR
dv/dt
I_S = 7 A, V_DS = 160 V, di/dt = 200 A/µs,
T_jmax = 175 ˚C
Gate source voltage
Power dissipation
T_C = 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Value
7
4.5
28
120
4
6
±20
40
-55... +175
55/150/56
Unit
A
mJ
kV/µs
V
W
˚C
Rev. 2.4
Page 1
2008-09-01