SPD02N80C3_08 Datasheet, PDF (2/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor Features New revolutionary high voltage technology

Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
Diode pulse current²⁾
Reverse diode dv /dt ⁴⁾
I_S
I _S,pulse
dv /dt
T _C=25 °C
SPD02N80C3
Value
2
6
4
Unit
A
V/ns
Parameter
Thermal characteristics
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal resistance, junction - case R _thJC
-
Thermal resistance, junction -
ambient
SMD version, device
R _thJA on PCB, minimal
-
footprint
SMD version, device
on PCB, 6 cm² cooling -
area⁵⁾
Soldering temperature, reflow
soldering
T _sold
reflow MSL1
-
-
3 K/W
-
62
35
-
-
260 °C
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D=250 µA
800
-
-V
Avalanche breakdown voltage
V _(BR)DS V _GS=0 V, I _D=2 A
-
870
-
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D=0.12 mA 2.1
3
3.9
Zero gate voltage drain current
I _DSS
V _DS=800 V, V _GS=0 V,
T _j=25 °C
-
-
5 µA
V _DS=800 V, V _GS=0 V,
T _j=150 °C
-
Gate-source leakage current
I _GSS
V _GS=20 V, V _DS=0 V
-
Drain-source on-state resistance
R _DS(on)
V _GS=10 V, I _D=1.2 A,
T _j=25 °C
-
25
-
-
100 nA
2.4
2.7 Ω
Gate resistance
Rev. 2.9
V _GS=10 V, I _D=1.2 A,
T _j=150 °C
-
6.5
-
R_G
f =1 MHz, open drain
-
1.2
-Ω
page 2
2008-10-15