SPD02N80C3_08 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor Features New revolutionary high voltage technology

CoolMOS^TM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
Product Summary
V _DS
R _DS(on)max @ T_j = 25°C
Q _g,typ
SPD02N80C3
800 V
2.7 Ω
12 nC
PG-TO252-3
CoolMOS^TM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Type
SPD02N80C3
Package
PG-TO252-3
Marking
02N80C3
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current²⁾
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
I _D,pulse
E _AS
E _AR
I _AR
dv /dt
T _C=100 °C
T _C=25 °C
I _D=1 A, V _DD=50 V
I _D=2 A, V _DD=50 V
V _DS=0…640 V
Gate source voltage
V _GS
static
AC (f >1 Hz)
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Rev. 2.9
page 1
Value
2
1.2
6
90
0.05
2
50
±20
±30
42
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2008-10-15