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| SMBTA06UPN Datasheet, PDF (2/5 Pages) Infineon Technologies AG – NPN/PNP Silicon AF Transistor Array | |||
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Electrical Characteristics
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 100 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 80 V, IE = 0
Collector cutoff current
VCB = 80 V, IE = 0 , TA = 150 °C
Collector cutoff current
VCE = 60 V, IB = 0
DC current gain 1)
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 10 mA
Base-emitter voltage 1)
IC = 100 mA, VCE = 1 V
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
SMBTA06UPN
Symbol
Values
Unit
min. typ. max.
V(BR)CEO 80
-
-V
V(BR)CBO 80
-
-
V(BR)EBO 4
-
-
ICBO
-
-
100 nA
ICBO
-
-
20 µA
ICEO
-
-
100 nA
hFE
-
100
-
-
100
-
-
VCEsat
-
- 0.25 V
VBE(ON)
-
-
1.2
fT
-
100
- MHz
Ccb
-
12
- pF
1) Pulse test: t ⤠300µs, D = 2%
2
Aug-21-2002
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