SMBTA06UPN Datasheet, PDF (1/5 Pages) Infineon Technologies AG – NPN/PNP Silicon AF Transistor Array

SMBTA06UPN
NPN/PNP Silicon AF Transistor Array

High breakdown voltage

Low collector-emitter saturation voltage

Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Tape loading orientation
Top View
654
W1s
123
Direction of Unreeling
Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
SC74_Tape
4
5
6
3
2
1
VPW09197
C1
B2
E2
6
5
4
TR1
TR2
1
2
3
E1
B1
C2
EHA07177
Type
SMBTA06UPN
Marking
s2P
Pin Configuration
Package
1=E 2=B 3=C 4=E 5=B 6=C _SC74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, T_S = 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point¹⁾
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
R_thJS
Value
Unit
80
V
80
4
500
mA
1
A
100
mA
200
330
mW
150
°C
-65 ... 150

105
K/W
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Aug-21-2002