SIGC12T120 Datasheet, PDF (2/4 Pages) Infineon Technologies AG – IGBT Chip

SIGC12T120
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Collector-emitter voltage, T_j=25 °C
V_CE
1200
V
DC collector current, limited by T_jmax
I_C
1)
A
Pulsed collector current, t_p limited by T_jmax
I_cpuls
24
A
Gate emitter voltage
V_GE
±20
V
Operating junction and storage temperature
1 ) _{depending on thermal properties of assembly}
T_j, T_stg
-55 ... +150
°C
STATIC CHARACTERISTICS (tested on chip), T_j=25 °C, unless otherwise specified:
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
V_(BR)CES V_GE=0V , I_C= 0.5mA 1200
V_CE(sat)
V_GE=15V, I_C=8A
1.4 1.7 2.1 V
V_GE(th)
I_C=300µA , V_GE=V_CE 5.0 5.8 6.5
I_CES
V_CE=1200V , V_GE=0V
50 µA
Gate-emitter leakage current
I_GES
V_CE=0V , V_GE=20V
120 nA
Integrated gate resistor
R_Gint
--
Ω
ELECTRICAL CHARACTERISTICS (tested at component):
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
C_{i s s}
C_{o s s}
C_{r s s}
V _{C E}= 2 5 V ,
V_GE=0V,
f=1MHz
min.
Value
typ. max.
605
37
29
Unit
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load
Parameter
Symbol
Conditions ¹⁾
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
t_r
t_d(off)
t_f
T_j=125°C
V_CC=600V,
I_C=25A,
V_GE=-15/15V,
R_G= --Ω
1) _{values also influenced by parasitic L- and C- in measurement and package.}
min.
Value
typ. max.
tbd
Unit
ns
tbd
tbd
tbd
Edited by INFINEON Technologies AI PS DD HV3, L7621A, Edition 2, 04.09.2003