SIGC12T120 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT Chip

IGBT³ Chip
SIGC12T120
FEATURES:
• 1200V Trench & Field Stop technology
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
This chip is used for:
• power module
Applications:
• drives
C
G
E
Chip Type
SIGC12T120
V_CE
I_Cn
1200V 8A
Die Size
3.54 x 3.5 mm²
Package Ordering Code
sawn on foil
Q67050-
A4102-A001
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
3.54 x 3.5
mm
2.028 x 2.028
1.107 x 0.702
12.4 / 6.9
mm²
140
µm
150
mm
0
grd
1200 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L7621A, Edition 2, 04.09.2003