SIGC100T60R3_10 Datasheet, PDF (2/5 Pages) Infineon Technologies AG – 600V Trench & Field Stop technology positive temperature coefficient

SIGC100T60R3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter voltage, T_vj =25 °C
DC collector current, limited by T_{vj max}
V_CE
I_C
600
V
1)
A
Pulsed collector current, t_p limited by T_{vj max}
I_c,puls
600
A
Gate emitter voltage
V_GE
±20
V
Junction temperature range
T_vj
Operating junction temperature
T_vj
Short circuit data ^{2 )} V_GE = 15V, V_CC = 360V, T_vj = 150°C
t_SC
-40 ... +175
°C
-40...+150
°C
6
µs
Reverse bias safe operating area ^{2 )} (RBSOA)
1 ) _{depending on thermal properties of assembly}
I _{C , m a x} = 400A, V _{C E , m a x} = 600V
T_vj ≤ 1 5 0 ° C
2 ) _{not subject to production test - verified by design/characterization}
Static Characteristic (tested on wafer), T_vj =25 °C
Parameter
Symbol
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
Gate-Emitter threshold voltage
Zero gate voltage collector current
Gate-Emitter leakage current
Integrated gate resistor
V_(BR)CES
V_CEsat
V_GE(th)
I_CES
I_GES
r_G
Conditions
V_GE=0V , I_C= 4 mA
V_GE=15V, I_C=200A
I_C=3.2mA , V_GE=V_CE
V_CE=600V , V_GE=0V
V_CE=0V , V_GE=20V
Value
Unit
min. typ. max.
600
1.05 1.45 1.85 V
5.0 5.8 6.5
10.1 µA
600 nA
2
Ω
Dynamic Characteristic (not subject to production test - verified by design / characterization), T_vj =25 °C
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Input capacitance
Output capacitance
Reverse transfer capacitance
C_ies
C_oes
C_res
V_CE=25V,
V_GE=0V,
f=1MHz
12335
769
pF
366
Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010