SIGC100T60R3_10 Datasheet, PDF (1/5 Pages) Infineon Technologies AG – 600V Trench & Field Stop technology positive temperature coefficient

SIGC100T60R3
IGBT³ Chip
Features:
• 600V Trench & Field Stop technology
• low V_CE(sat)
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
This chip is used for:
• power module
Applications:
• drives
C
G
E
Chip Type
SIGC100T60R3
V_CE
I_C
Die Size
600V 200A 9.73 x 10.23 mm²
Package
sawn on foil
Mechanical Parameter
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
9.73 x 10.23
( 4.256 x 1.938 ) x 4
( 4.256 x 2.356 ) x 4
1.615 x 0.817
mm²
99.5
70
µm
150
mm
126
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010