SDT12S60_08 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode

Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SDT12S60
Symbol
Values
Unit
min. typ. max.
R_thJC
R_thJA
-
-
1.7 K/W
-
-
62
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Diode forward voltage
I_F=12A, T_j=25°C
I_F=12A, T_j=150°C
V_F
V
-
1.5 1.7
-
1.7 2.1
Reverse current
V_R=600V, T_j=25°C
V_R=600V, T_j=150°C
I_R
µA
-
40 400
- 100 2000
Rev. 2.3
Page 2
2008-06-03