SDT12S60_08 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• No forward recovery
SDT12S60
thinQ! SiC Schottky Diode
Product Summary
V_RRM
600 V
Q_c
30 nC
I_F
12 A
PG-TO220-2-2.
Type
SDT12S60
Package
Ordering Code
PG-TO220-2-2. Q67040-S4470
Marking Pin 1 Pin 2
D12S60 C
A
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, T_C=100°C
RMS forward current, f=50Hz
I_F
I_FRMS
Surge non repetitive forward current, sine halfwave I_FSM
T_C=25°C, t_p=10ms
Repetitive peak forward current
I_FRM
T_j=150°C, T_C=100°C, D=0.1
Non repetitive peak forward current
I_FMAX
t_p=10µs, T_C=25°C
i ²t value, T_C=25°C, t_p=10ms
Repetitive peak reverse voltage
∫i²dt
V_RRM
Surge peak reverse voltage
Power dissipation, T_C=25°C
V_RSM
P_tot
Operating and storage temperature
T_j , T_stg
Value
12
17
36
49
120
6.48
600
600
88.2
-55... +175
Unit
A
A²s
V
W
°C
Rev. 2.3
Page 1
2008-06-03