PTFB211803EL Datasheet, PDF (2/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz

PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-carrier WCDMA Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 1.3 A, P_OUT = 38 W average, ƒ₁ = 2165 MHz, ƒ₂ = 2170 MHz, 3GPP signal, channel bandwidth =
3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
G_ps
16
17
—
dB
hD
28
29.5
—
%
Intermodulation Distortion
IMD
—
–32.5 –31.5
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 30 V, I_DQ = 1.3 A
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 180 W CW)
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.05
3.0
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
W
V
µA
Symbol Value
V_DSS
65
V_GS –6 to +10
T_J
200
T_STG –40 to +150
R_qJC
0.3
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB211803EL V1
PTFB211803EL V1 R250
PTFB211803FL V2
PTFB211803FL V2 R250
Package Type
H-33288-6
H-33288-6
H-34288-4/2
H-34288-4/2
Package Description
Slotted flange, single-ended
Slotted flange, single-ended
Earless flange, single-ended
Earless flange, single-ended
Shipping
Tray
Tape & Reel, 250 pcs
Tray
Tape & Reel, 250 pcs
Data Sheet
2 of 14
Rev. 05, 2010-11-10