PTFA072401EL_15 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 1800 mA, P_OUT = 220 W PEP, ƒ = 765 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
18
_D
43
IMD
—
PTFA072401EL
PTFA072401FL
Typ
Max
Unit
19
—
dB
45
—
%
–29
–28
dBc
DC Characteristics
Characteristic
Conditions
Symbol Min Typ
Drain-Source Breakdown Voltage V_GS = 0 V, I_DS = 10 mA
V_(BR)DSS
65
—
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—
V_DS = 63 V, V_GS = 0 V
I_DSS
—
—
On-State Resistance
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
1.82
Operating Gate Voltage
V_DS = 30 V, I_DQ = 1800 mA
V_GS
2.0
2.5
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA

V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 240 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_JC
Value
65
–0.5 to +12
200
700
4.0
–40 to +150
0.28
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA072401EL V5
PTFA072401FL V5
Order Code
PTFA072401ELV5XWSA1
PTFA072401FLV5XWSA1
Package
H-33288-2
H-34288-2
Package Description
Slotted flange
Earless flange
Shipping
Tray
Tray
Data Sheet – DRAFT ONLY
2 of 9
Rev. 05, 2015-02-24