PTFA072401EL_15 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 30 V, 725 – 770 MHz
Description
The PTFA072401EL and PTFA072401FL are 240-watt LDMOS
FETs designed for use in cellular power amplifier applications in the
725 to 770 MHz frequency band. These devices feature internal I/O
matching and thermally-enhanced, open-cavity ceramic packages.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior reliability.
PTFA072401EL
Package H-33288-2
PTFA072401FL
Package H-34288-2
PTFA072401EL
PTFA072401FL
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.9 A, ƒ = 765 MHz
21
20
19
Gain
18
17
16
15
30
Efficiency
35
40
45
50
Output Power (dBm)
65
55
45
35
25
15
5
55
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
770 MHz, 30 V
- Average output power = 40 W
- Linear gain = 19 dB
- Efficiency = 25%
- Intermodulation distortion = –39 dBc
• Typical CW performance, 770 MHz, 30 V
- Output power at P_1dB = 240 W
- Efficiency = 58%
• Integrated ESD protection
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
• Thermally-enhanced packages, Pb-free and RoHS
compliant with low gold (<0.25 micron) plating
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 30 V, I_DQ = 1800 mA, P_OUT = 40 W average, ƒ₁ = 760 MHz, ƒ₂ = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8.1 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G_ps
_D
IMD
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet – DRAFT ONLY
1 of 9
Min Typ
—
19
—
25
—
–39
Max
—
—
—
Unit
dB
%
dBc
Rev. 05, 2015-02-24