PTF180901E Datasheet, PDF (2/2 Pages) Infineon Technologies AG – GSM/EDGE RF Power FET

Product Brief
Typical EDGE EVM Performance
V_DD = 28 V, I_DQ = 1.2 A, f_C = 1989.1 MHz
4.0
40
%
%
3.0
30
Efficiency
2.5
25
EVM
2.0
20
1.5
15
1.0
10
0.5
5
0
0
30
35
40
45 dBm 50
Output Power
Performance
Characteristics
Two-Tone Measurements
V_DD = 28 V, I_DQ = 1.2 A, P_OUT = 90 W PEP, f_C = 1930 MHz, Tone Spacing = 100 kHz
Characteristic
Symbol Min.
Typ.
Max. Units
Gain
G_ps
14
Drain Efficiency
η_D
30
Intermodulation Distortion IMD
–
15
–
dB
36
–
%
-30
-28
dBc
EDGE 1930 - 1990 MHz
Output Power 33 W
Application Example
PTF180101S
PTF180901
+11.7 dBm
+30.7 dBm
45.2 dBm
EDGE
P_-1dB = 15 W
Gain = 19 dB
EVM = 1.1%
P_-1dB = 115 W
Gain = 14.5 dB
EVM = 1.7%
ACPR @ 400 kHz = -60 dBc
ACPR @ 600 kHz = -74 dBc
V_DD = 28 V
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© Infineon Technologies AG 2004.
All Rights Reserved.
Template: pb_tmplt.fm/4/2004-01-01
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Published by Infineon Technologies AG
Ordering No. B134-H8296-X-0-7600
Printed in Germany
PS 0104.5 NB