PTF180901E Datasheet, PDF (1/2 Pages) Infineon Technologies AG – GSM/EDGE RF Power FET

Product Brief
PTF180901
GSM/EDGE RF Power FET
The PTF180901
One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901
is optimized for the DCS and PCS bands. This device operates at 47%
efficiency with 13.5 dB of gain and produces 115 W, P_-1dB. This high-gain
high-efficiency device is ideal to power your amplifier design.
A laterally diffused single-ended GOLDMOS^® FET, it incorporates full
gold metallization and integrated ESD protection to ensure excellent
lifetime and reliability.
Features
■ Optimized for bandwidths 1805 MHz – 1880 MHz and
1930 MHz – 1990 MHz
■ Improved ruggedness
■ Broadband internal matching
■ Full gold metallization
■ Integrated ESD protection: Human Body Model, Class 1 (minimum)
■ Excellent thermal stability
■ Low HCI drift
■ Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power
Performance
■ Typical EDGE performance
– Average output power = 35 W
– Gain = 14.5 dB
– Efficiency = 32%
– EVM = 1.7% AVG
– ACPR @ 400 KHz = -60 dBc
– ACPR @ 600 KHz = -74 dBc
■ Typical two-tone performance
– Output power = 90 W PEP
– Gain = 15 dB
– Efficiency = 36%
– IM3 = -30 dBc
– 1 MHz tone spacing
Type List
Type
PTF180901E
PTF180901F
Output Power
90 W
90 W
Gain
15 dB
15 dB
Supply Voltage Package Type
Package
28 V
Thermally enhanced 30248
28 V
Thermally enhanced, 31248
earless
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