PTF180601 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz

PTF180601
Electrical Characteristics at T_CASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 800 mA
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min Typ
65
—
—
—
—
0.135
2.5
3.2
—
0.01
Max
—
1.0
—
4.0
1.0
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance
(T_CASE = 70°C, 60 W CW)
PTF180601C
PTF180601E
PTF180601C
PTF180601E
Symbol
V_DSS
V_GS
T_J
P_D
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
159
0.91
180
1.03
–40 to +150
1.1
0.97
Units
V
µA
Ω
V
µA
Unit
V
V
°C
W
W/°C
W
W/°C
°C
°C/W
°C/W
Data Sheet
2
2004-05-03