PTF180601 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz

PTF180601
LDMOS Field Effect Transistor
60 W, DCS/PCS Band
1805–1880 MHz, 1930–1990 MHz
Description
Features
The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for
EDGE applications in the DCS/PCS Band. Full gold metallization ensures
excellent device lifetime and reliability.
EDGE EVM Performance
EVM & Efficiency vs. Power Output
V_DD = 28 V, I_DQ = 0.8 A, f = 1989.8 MHz
4
40
3
Ef f iciency
30
2
20
1
EVM
0
35
37
39
41
43
Output Power (dBm)
10
0
45
• Broadband internal matching
• Typical two-tone performance
- Average output power = 30 W
- Gain = 16.5 dB
- Efficiency = 35%
• Typical CW performance
- Output power at P–1dB = 75 W
- Gain = 15.5 dB
- Efficiency = 47%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI Drift
• Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
PTF180601C
Package 21248
PTF180601E
Package 30248
ESD: Electrostatic discharge sensitive device — observe handling precautions!
RF Characteristics at T_CASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 800 mA, P_OUT = 22 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 KHz
Modulation Spectrum @ 600 KHz
Gain
Drain Efficiency
Symbol Min Typ
EVM (RMS) —
1.7
ACPR
—
–60
ACPR
—
–73
G_ps
—
16.5
η_D
—
32
Max
—
—
—
—
—
Units
%
dBc
dBc
dB
%
Two–Tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 800 mA, P_OUT = 60 W PEP, f = 1930 MHz, Tone Spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
η_D
IMD
15
16.5
30
35
—
–30
Max
—
—
–28
Units
dB
%
dBc
Data Sheet
1
2004-05-03