PTF080101 Datasheet, PDF (2/4 Pages) Infineon Technologies AG – LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Advance Information
PTF080101
DC Characteristics at T_CASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, I_DS = 0.1 A
V_DS = 28 V, I_DQ = 150 mA
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C), ws1 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Min Typ
65
—
—
—
—
0.83
—
3.2
—
—
Max
—
1.0
—
—
1.0
Value
65
–0.5 to +12
200
58
0.333
–40 to +150
3.0
Units
V
µA
Ω
V
µA
Unit
V
V
°C
W
W/°C
°C
°C/W
Developmental Data Sheet
2
2004-03-08