PTF080101 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Advance Information
PTF080101
LDMOS RF Power Field Effect Transistor
10 W, 860–960 MHz
Description
Features
The PTF080101 is a 10 W, internally matched GOLDMOS FET intended
for EDGE applications in the 860 to 960 MHz band. Full gold metalliza-
tion ensures excellent device lifetime and reliability.
EDGE EVM Performance
EVM and Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 0.15 A, f = 959.8 MHz
4
40
3
30
Ef f iciency
2
20
EV M
1
10
• Broadband internal matching
• Typical EDGE performance
- Average output power = 4.0 W
- Gain = 19 dB
- Efficiency = 31%
• Typical CW performance
- Output power at P–1dB = 13 W
- Gain = 18 dB
- Efficiency = 55%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
0
0
25
30
35
40
Output Power (dBm)
PTF080101S
Package 32259
ESD: Electrostatic discharge sensitive device—observe handling precautions!
RF Characteristics at T_CASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 150 mA, P_OUT = 4.0 W, f = 959.8 MHz
Characteristic
Symbol Min Typ
Max Units
Error Vector Magnitude
EVM (RMS) —
1.3
—
%
Modulation Spectrum @ 400 kHz
ACPR
—
–61
—
dBc
Modulation Spectrum @ 600 kHz
ACPR
—
–75
—
dBc
Gain
Drain Efficiency
G_ps
—
19
—
dB
η_D
—
31
—
%
Two–Tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 150 mA, P_OUT = 10 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
—
η_D
—
IMD
—
Developmental Data Sheet
1
Typ
19
37
–32
Max
—
—
—
Units
dB
%
dBc
2004-03-08